Discovery Co. together with one of the leading scientific institutions in the field elaborated a new group of semiconductor crystals with unique properties so much needed in many spheres of modern high-tech applications.
They need these radiation stable detectors:
- for use in space and at nuclear plants,
- in tomography medicine and
- at the customs and
- in different surveillance systems
where high sensitivity and minimum impact on peoples’ health are of uppermost importance,
- in fiber optics communication lines where these detectors provide data transfer speed x10 compared to presently used.
Scientifically speaking -
1. We have developed a technology of growing of high-radiation stable semiconductor crystal A2III B3VI that actually don’t change their electrical, optical and photoelectrical properties under total radiation doze of X-, gamma-, neutrons with fluence up to 1018 cm -2 that in 104 times exceeds the radiation doze that causes property changes in mostly used Si, Ge based semiconductors.
2. As compared to classical semiconductor of this group In2Te3 where electron mobility doesn’t exceed 30 cm2/B·c that makes dubious its application in electronic and photo electronic devices we have grown new crystals such as In2Hg3Te6 for example, where electron mobility reaches 5·102-103 cm2/B·c that opens new wide possibilities of its use in electronic and photo electronic devices.
3. We have also grown In2Hg3Te6 crystals with forbidden zone Eg=0,72eB at 300 K and electron concentration n<1014 cm-3 that corresponds to semiconductor itself. µ>500 cm2/B·c mobility is reached at 400 K.
4. On the basis of this semiconductor Schottki diodes with sensitivity Sl>1 A/Bt and practically 100% quantum efficiency were made. Their time constant (response time) is t < 1 ns and spectral zone of hardly changing sensitivity is l=0,6-1,6 mkm that covers all 4 spectral regions exploited in optical fiber communication lines.
5. As opposed to Germanium this semiconductor possesses direct optical transitions that increase quantum effect and response of In2Hg3Te6 photodiodes.
6. As compared to commonly used in these spectral regions photodiodes made on A3B5 solid solutions our semiconductor melts congruous and is a chemical compound not a solid solution. This means that the crystals are homogeneous and have highly uniform electrical and photoelectrical properties. This enables to create multi-elements photo detectors ( sets or matrixes) , say, for very important spectral regions l=1,06 mkm, l=1,5-1,55mkm.
Photodiodes are stable to degradation and keep their properties in natural surroundings for around 10 years.
Taking into consideration 100% quantum efficiency and time response t < 1 ns photodiodes Schottki made on these semiconductors can be highly successfully used in optical fiber communication lines.
Due to high radiation stability of gown by us crystals and possibility of making on their basis effective photodiodes not only for spectral region l=0,6-1,6 mkm but also for x- and gamma radiation regions there appears a nice opportunity to create on the basis of In2Hg3Te6 multi-elements and matrix photodiodes for different coordinates survey/location systems of different radiation including laser one.
Space systems is another wide field of possible use of photo detectors with such properties.
Also because of high sensitivity of x- and gamma radiation these photodiodes can be used in different registration and survey systems for detecting sources of corresponding radiation (at the customs, etc.)
You are welcome to contact us by
e-mail: discoverycrystal@gmail.com
phone: +380505021200
There is nothing more frustrating than
lost opportunities and…time as a result.
They need these radiation stable detectors:
- for use in space and at nuclear plants,
- in tomography medicine and
- at the customs and
- in different surveillance systems
where high sensitivity and minimum impact on peoples’ health are of uppermost importance,
- in fiber optics communication lines where these detectors provide data transfer speed x10 compared to presently used.
Scientifically speaking -
1. We have developed a technology of growing of high-radiation stable semiconductor crystal A2III B3VI that actually don’t change their electrical, optical and photoelectrical properties under total radiation doze of X-, gamma-, neutrons with fluence up to 1018 cm -2 that in 104 times exceeds the radiation doze that causes property changes in mostly used Si, Ge based semiconductors.
2. As compared to classical semiconductor of this group In2Te3 where electron mobility doesn’t exceed 30 cm2/B·c that makes dubious its application in electronic and photo electronic devices we have grown new crystals such as In2Hg3Te6 for example, where electron mobility reaches 5·102-103 cm2/B·c that opens new wide possibilities of its use in electronic and photo electronic devices.
3. We have also grown In2Hg3Te6 crystals with forbidden zone Eg=0,72eB at 300 K and electron concentration n<1014 cm-3 that corresponds to semiconductor itself. µ>500 cm2/B·c mobility is reached at 400 K.
4. On the basis of this semiconductor Schottki diodes with sensitivity Sl>1 A/Bt and practically 100% quantum efficiency were made. Their time constant (response time) is t < 1 ns and spectral zone of hardly changing sensitivity is l=0,6-1,6 mkm that covers all 4 spectral regions exploited in optical fiber communication lines.
5. As opposed to Germanium this semiconductor possesses direct optical transitions that increase quantum effect and response of In2Hg3Te6 photodiodes.
6. As compared to commonly used in these spectral regions photodiodes made on A3B5 solid solutions our semiconductor melts congruous and is a chemical compound not a solid solution. This means that the crystals are homogeneous and have highly uniform electrical and photoelectrical properties. This enables to create multi-elements photo detectors ( sets or matrixes) , say, for very important spectral regions l=1,06 mkm, l=1,5-1,55mkm.
Photodiodes are stable to degradation and keep their properties in natural surroundings for around 10 years.
Taking into consideration 100% quantum efficiency and time response t < 1 ns photodiodes Schottki made on these semiconductors can be highly successfully used in optical fiber communication lines.
Due to high radiation stability of gown by us crystals and possibility of making on their basis effective photodiodes not only for spectral region l=0,6-1,6 mkm but also for x- and gamma radiation regions there appears a nice opportunity to create on the basis of In2Hg3Te6 multi-elements and matrix photodiodes for different coordinates survey/location systems of different radiation including laser one.
Space systems is another wide field of possible use of photo detectors with such properties.
Also because of high sensitivity of x- and gamma radiation these photodiodes can be used in different registration and survey systems for detecting sources of corresponding radiation (at the customs, etc.)
You are welcome to contact us by
e-mail: discoverycrystal@gmail.com
phone: +380505021200
There is nothing more frustrating than
lost opportunities and…time as a result.
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New Generation Crystals
